相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Transconductance sensitivity enhancement in gated-MIS(p) tunnel diode by self-protective effective local thinning mechanism
Wei-Chih Kao et al.
APPLIED PHYSICS LETTERS (2016)
Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed oxides
Chang-Feng Yang et al.
AIP ADVANCES (2016)
Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes
Chien-Chih Lin et al.
JOURNAL OF APPLIED PHYSICS (2014)
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
Jen-Yuan Cheng et al.
JOURNAL OF APPLIED PHYSICS (2009)
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Hei Wong et al.
MICROELECTRONIC ENGINEERING (2006)
A comprehensive study of inversion current in MOS tunneling diodes
CH Lin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Minority carrier lifetime degradation in boron-doped Czochralski silicon
SW Glunz et al.
JOURNAL OF APPLIED PHYSICS (2001)
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
WC Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
分享论文
