相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Large valley-polarized state in single-layer NbX2 (X = S, Se): Theoretical prediction
Yanmei Zang et al.
NANO RESEARCH (2021)
Structure effect on intrinsic piezoelectricity in septuple-atomic-layer MSi2N4 (M=Mo and W)
San-Dong Guo et al.
COMPUTATIONAL MATERIALS SCIENCE (2021)
Biaxial strain enhanced piezoelectric properties in monolayer g-C3N4
San-Dong Guo et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2021)
Two-dimensional ferromagnetic semiconductors of rare-earth monolayer GdX2 (X = Cl, Br, I) with large perpendicular magnetic anisotropy and high Curie temperature
Weiqi Liu et al.
MATERIALS TODAY PHYSICS (2021)
Valley-Contrasting Physics in Single-Layer CrSi2N4 and CrSi2P4
Yibo Liu et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)
Valley-related multiple Hall effect in monolayer VSi2P4
Xiangyu Feng et al.
PHYSICAL REVIEW B (2021)
Two-dimensional intrinsic ferrovalley GdI2 with large valley polarization
Hai-Xia Cheng et al.
PHYSICAL REVIEW B (2021)
Small strain induced large piezoelectric coefficient in α-AsP monolayer
San-Dong Guo et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
Valleytronics with a twist
Giulia Pacchioni
NATURE REVIEWS MATERIALS (2020)
Intrinsic piezoelectricity in monolayer MSi2N4 (M = Mo, W, Cr, Ti, Zr and Hf)
San-Dong Guo et al.
EPL (2020)
Atomic-orbital-free intrinsic ferromagnetism in electrenes
Jun Zhou et al.
PHYSICAL REVIEW B (2020)
Prediction of single-layer TiVI6as a promising two-dimensional valleytronic semiconductor with spontaneous valley polarization
Wenhui Du et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Intrinsic anomalous valley Hall effect in single-layer Nb3I8
Rui Peng et al.
PHYSICAL REVIEW B (2020)
Prediction of a two-dimensional high-TC f-electron ferromagnetic semiconductor
Bing Wang et al.
MATERIALS HORIZONS (2020)
Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations
Pei Zhao et al.
APPLIED PHYSICS LETTERS (2019)
Symmetry-breaking induced large piezoelectricity in Janus tellurene materials
Yu Chen et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2019)
Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6
Zhigang Song et al.
NANOSCALE (2018)
Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers
San-Dong Guo et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Valleytronics: Opportunities, Challenges, and Paths Forward
Steven A. Vitale et al.
SMALL (2018)
Emergence of high piezoelectricity along with robust electron mobility in Janus structures in semiconducting Group IVB dichalcogenide monolayers
Dimple et al.
JOURNAL OF MATERIALS CHEMISTRY A (2018)
Strain-Induced Optimization of Nanoelectromechanical Energy Harvesting and Nanopiezotronic Response in a MoS2 Monolayer Nanosheet
Nityasagar Jena et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2017)
Large In-Plane and Vertical Piezoelectricity in Janus Transition Metal Dichalchogenides
Liang Dong et al.
ACS NANO (2017)
Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers
Yu Guo et al.
APPLIED PHYSICS LETTERS (2017)
Concepts of ferrovalley material and anomalous valley Hall effect
Wen-Yi Tong et al.
NATURE COMMUNICATIONS (2016)
Strain-induced enhancement in the thermoelectric performance of a ZrS2 monolayer
H. Y. Lv et al.
JOURNAL OF MATERIALS CHEMISTRY C (2016)
Biaxial strain tuned thermoelectric properties in monolayer PtSe2
San-Dong Guo
JOURNAL OF MATERIALS CHEMISTRY C (2016)
Valleytronics in 2D materials
John R. Schaibley et al.
NATURE REVIEWS MATERIALS (2016)
Ab Initio Prediction of Piezoelectricity in Two-Dimensional Materials
Michael N. Blonsky et al.
ACS NANO (2015)
Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
Ruixiang Fei et al.
APPLIED PHYSICS LETTERS (2015)
Piezoelectricity in two-dimensional group-III monochalcogenides
Wenbin Li et al.
NANO RESEARCH (2015)
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wenzhuo Wu et al.
NATURE (2014)
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
Keliang He et al.
NANO LETTERS (2013)
Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
Hongliang Shi et al.
PHYSICAL REVIEW B (2013)
Strain effects on the spin-orbit-induced band structure splittings in monolayer MoS2 and graphene
Tawinan Cheiwchanchamnangij et al.
PHYSICAL REVIEW B (2013)
Intrinsic Piezoelectricity in Two-Dimensional Materials
Karel-Alexander N. Duerloo et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2012)
Field-induced polarization of Dirac valleys in bismuth
Zengwei Zhu et al.
NATURE PHYSICS (2012)
Effect of hydrogen coverage on the Young's modulus of graphene
Emiliano Cadelano et al.
PHYSICAL REVIEW B (2012)
Effects of strain on band structure and effective masses in MoS2
H. Peelaers et al.
PHYSICAL REVIEW B (2012)
Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides
Di Xiao et al.
PHYSICAL REVIEW LETTERS (2012)
Berry phase effects on electronic properties
Di Xiao et al.
REVIEWS OF MODERN PHYSICS (2010)
Valley-dependent optoelectronics from inversion symmetry breaking
Wang Yao et al.
PHYSICAL REVIEW B (2008)
First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures
Atsushi Togo et al.
PHYSICAL REVIEW B (2008)
Measurement of the elastic properties and intrinsic strength of monolayer graphene
Changgu Lee et al.
SCIENCE (2008)
Valley-contrasting physics in graphene: Magnetic moment and topological transport
Di Xiao et al.
PHYSICAL REVIEW LETTERS (2007)
Systematic treatment of displacements, strains, and electric fields in density-functional perturbation theory
X Wu et al.
PHYSICAL REVIEW B (2005)
Chern numbers in discretized Brillouin zone: Efficient method of computing (spin) Hall conductances
T Fukui et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2005)
分享论文
