CONTROL OF THE PROPERTIES OF BaxSr1-xTiO3 FERROELECTRIC FILMS

A method is proposed to control the properties of thin ferroelectric films under forced strain due to the differences in crystal lattice parameters and thermal expansion coefficient between the film and substrate materials. The control method is based on applying additional mechanical strain to the substrate. A single-crystal BaxSr1-xTiO3 film model is studied within the framework of phenomenological theory using the Landau potential. It is shown that additional uniaxial strain of the substrate in the BaxSr1-xTiO3 film changes the material constants of the film. Abnormal change occurs at strains close to the values at which the phase state of the film changes. The generation of surface acoustic waves is studied. The modeling results indicate the possibility of controlling the excitation of surface acoustic waves in the film-silicon substrate heterostructure.

Automated summary

A method for controlling the properties of thin ferroelectric films by applying additional strain to the substrate is proposed in this study. Utilizing phenomenological theory and Landau potential model, it is shown that the material constants of the film can be altered by introducing additional strain to the substrate. This allows for control over the phase state of the film and excitation of surface acoustic waves in the film-silicon substrate heterostructure.