期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 3, 期 12, 页码 5296-5306出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c00801
关键词
organic semiconductors; n- type doping benzimidazole derivative; organic thin-film transistors; electrochemical analysis; quantum chemical calculations
资金
- Project of International Standards Development on Energy Conservation of Ministry of Economy, Trade, and Industry of Japan (METI)
This study investigates the effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant in comparison to N-DMBI-H, showing that DMe-N-DMBI-H exhibits slightly stronger electron-donating ability based on electrochemical and electrical characterizations as well as quantum chemical calculations.
4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C-61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.
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