相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices
Gaspard Hiblot et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2021)
Process-induced charging damage in IGZO nTFTs
Gaspard Hiblot et al.
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2021)
Defect profiling in FEFET Si:HfO2 layers
B. J. O'Sullivan et al.
APPLIED PHYSICS LETTERS (2020)
Electrical Characterization of BEOL Plasma-Induced Damage in Bulk FinFET Technology
Gaspard Hiblot et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2019)
Observation of Plasma-Induced Damage in Bulk Germanium p-Type FinFET Devices and Curing in High-Pressure Anneal
Gaspard Hiblot et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2019)
On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET
Md Nur Kutubul Alam et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Factor Analysis of Plasma-Induced Damage in Bulk FinFET Technology
Gaspard Hiblot et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Wafer-Level Mapping of Plasma-Induced Charging Effect by ON-Chip In Situ Recorders in FinFET Technologies
Yi-Pei Tsai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
The 3-D Interconnect Technology Landscape
Eric Beyne
IEEE DESIGN & TEST (2016)
Stabilizing the ferroelectric phase in doped hafnium oxide
M. Hoffmann et al.
JOURNAL OF APPLIED PHYSICS (2015)
Reliability Characteristics of Ferroelectric Si: HfO2 Thin Films for Memory Applications
Stefan Mueller et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2013)
分享论文
