Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

Charging damage due to gate antennae is investigated on 65nm NMOS devices with a thick 9.5nm HfOx gate dielectric. The hysteresis and time sampling of the channel current are considered to evaluate this degradation. Cycles of double-ramp sweeps and reset pulses demonstrate that charging causes different trap characteristics in plate-antenna and control transistors.

Automated summary

The investigation focused on charging damage due to gate antennae on 65nm NMOS devices with a thick 9.5nm HfOx gate dielectric. It was found that charging caused different trap characteristics in plate-antenna and control transistors.