4.3 Article

Defect Passivation of CsPbBr3 with AgBr for High-Performance All-Inorganic Perovskite Solar Cells

期刊

出版社

WILEY
DOI: 10.1002/aesr.202000099

关键词

defect passivation; doping; grain boundary passivation; perovskite solar cells

资金

  1. Guangdong Basic and Applied Basic Research Foundation [2020A1515010916]
  2. Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting [2017KSYS007]
  3. High-level University Fund [G02236004]
  4. National Natural Science Foundation of China [51927801, 61875119, 61675217, 21972017, 51971128]

向作者/读者索取更多资源

A doping strategy using AgBr added directly to the precursor solution is shown to improve the performance of CsPbBr3-based perovskite solar cells, resulting in enhanced efficiency and long-term stability.
CsPbBr3-based perovskite solar cells possess both high humidity and temperature tolerance, and also have excellent long-term stability in air, but the defect states in the bulk perovskite are always an obstacle for further improvement of their efficiency. Herein, a doping strategy is demonstrated in which AgBr is directly added to the precursor solution in the first step. An appropriate amount of Ag+ ion doping can passivate the defects in bulk or at grain boundaries, reduce the defect density of the film, and form a pinhole-free film. Finally, the best power conversion efficiency of the solar cell reaches to 6.92% and exhibits a long-term stability in a humid environment. This work provides a simple and effective method for improving the quality of CsPbBr3 film and the performance of CsPbBr3-based perovskite solar cells.

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