期刊
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
卷 -, 期 -, 页码 2308-2315出版社
IEEE
DOI: 10.1109/ECCE47101.2021.9595895
关键词
Dual Active Bridge (DAB); Isolated Three Phase Power Factor Correction (PFC) Rectifier; Variable frequency drive (VFD); Silicon Carbide (SiC); Oxide Semiconductor Field Effect Transistor (MOSFET)
This paper provides a comprehensive study on adapting DAB PFC rectifier design to MV HP VFD systems, presenting a novel SiC MV 3Ph PFC rectifier and discussing control enhancement to minimize grid current THD at ultra-light load. Analysis and simulations verify the novel circuitry mechanism of the proposed topology in improving THD at ultra-light load conditions.
This paper provides a comprehensive study to adapt dual-active-bridge (DAB) power-factor correction (PFC) rectifier design to the medium voltage (MV) high power (HP) variable frequency drive (VFD) systems. First, the novel silicon carbide (SiC) MV three-phase (3 Ph) PFC rectifier is proposed. Its topology, key SiC module and control scheme are presented. Second, control enhancement to keep the grid current total harmonic distortion (THD) at a minimum at ultra-light load is discussed. The proposed topology has a novel circuitry mechanism to improve the THD at the ultra-light load condition. Analysis and simulations are carried out to verify the proposal.
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