GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

There is a strong need for a large band gap pFET device with good performance for an efficient high voltage CMOS platform for power conversion applications. In this work, we report on GaN/AlGaN superlattice based MESFinFET devices with MOCVD regrown p(+) contacts around the fins. 75 nm wide FinFETs showed a normally-off operation with an on-current of 65 mA/mm, highest ever reported for any GaN based E-mode pFETs. Simultaneously, a large I-on/I-off >10(7) was also achieved.

Automated summary

In this study, GaN/AlGaN superlattice based MESFinFET devices were reported with MOCVD regrown p(+) contacts around the fins, achieving a normally-off operation with an on-current of 65 mA/mm and a large I-on/I-off >10^7. This represents a significant advancement in the development of large band gap pFET devices for efficient high voltage CMOS platforms in power conversion applications.