Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

2D CMOS transistors fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for silicon transistors at sub-12 nm channel length [L-G]. We demonstrate record NMOS contacts using a high melting point metal, down to 146 Omega-mu m contact resistance (R-C). We present the best PMOS performance on a grown monolayer WSe2 film with 50 mu A/mu m I-on and 141 mV/dec sub-threshold swing (SS) using a Ru contact metal, showing record PMOS contact resistance, R-C = 2.7 k Omega-mu m. For the first time, we present 300 mm wafer growth options of 4 different 2D TMD films: MoS2, WS2, WSe2, MoSe2 that were grown at BEOL compatible temperatures. On unpassivated channel devices we show two methods of channel curing. First, N-2 desiccation can improve I-ON (similar to 2x) and SS (similar to 0.6x) simultaneously. Secondly, FGA annealing can improve bare channel devices by increasing their median I-on by 10x and lowering their SS by almost 50%. Finally, we benchmark our results against leading grown TMD devices, demonstrating record drive-currents among devices with good SS.

Automated summary

2D CMOS transistors made with TMD materials show promising potential as a replacement for silicon transistors. The research demonstrates record NMOS and PMOS performance, as well as growth options for various TMD films.