A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel

We successfully developed a high-performance FeFET memory device by integrating ZrO2 anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO2 ferroelectric by anti-ferroelectric ZrO(2 )effectively reduces the coercive field and boosts endurance. Furthermore, the IGZO channel allows for an interlayer free gate stack that lowers the working voltage and enhances retention compared to Si channel. The novel FeFET demonstrates a high endurance up to 10(9) cycles, a good retention of > 10 years, and a low working voltage of 2 V, greatly empowering the device for future embedded memory with ultra-low energy consumption.

Automated summary

A high-performance FeFET memory device was developed by integrating ZrO2 anti-ferroelectric with IGZO channel for the first time. This novel device demonstrates high endurance, good retention, and low working voltage, making it ideal for future embedded memory with ultra-low energy consumption.