Optoelectronic Readout of STT-RAM Memory Cells Using Plasmon Drag Effect

An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed. (C) 2021 The Author(s)

Automated summary

An optoelectronic readout method based on the plasmon drag effect for reading the state of STT-RAM cells is proposed, which can achieve up to 29.6 Gbit/sec readout speed according to simulations.