The unique properties of SiCN as bonding material for hybrid bonding

Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 degrees C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.

Automated summary

The successful direct Cu-SiCN hybrid bonding was achieved by using a thermal budget of 250 degrees C, with tight control on processing steps and the properties of SiCN dielectric material playing a key role.