期刊
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
卷 -, 期 -, 页码 842-845出版社
IEEE
DOI: 10.1109/IMS19712.2021.9575000
关键词
BiCMOS; broadband; cascode; distributed power amplifier (DPA); HBT; lumped element; non-uniform; phased array; SiGe; transformer; transmission line (TL); wideband
This research presents a SiGe HBT cascode non-uniform distributed power amplifier with optimized impedance and output impedance transformer design, achieving high efficiency and wideband performance. Experimental results demonstrate excellent performance of the design across multiple frequency bands.
This paper presents a 2-24 GHz SiGe HBT cascode, non-uniform distributed power amplifier (NDPA). Optimum impedances at each SiGe HBT cascode are obtained by simultaneous characteristic impedance scaling of the collector transmission lines (TLs) and SiGe HBT emitter area tapering. To further boost output power (P-out), a compact, wideband two-section lumped-element output impedance transformer is proposed, which lowers a load impedance from 50 to 25 Omega. Each lambda/4 transformer is realized by four cascaded C-L-C pi-networks integrated into a single symmetric inductor, for its compact size and high passive efficiency. The proposed SiGe HBT cascode NDPA achieves a saturated P-out of 21.3 dBm at 8 GHz and peak power added efficiency (PAE) of 21.7% at 4 GHz, with its 3 dB bandwidth and PAE higher than 12.2% from 2 to 24 GHz.
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