期刊
ENERGY MATERIAL ADVANCES
卷 2021, 期 -, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.34133/2021/8481915
关键词
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资金
- National Natural Science Foundation of China [61764009, 51762043, 51974143]
- National Key R&D Program of China [2018YFC1901801, 2018YFC1901805]
- Major Science and Technology Projects in Yunnan Province [2019ZE007]
- Key Project of Yunnan Province Natural Science Fund [2018FA027]
- Yunan Ten Thousand Talents Plan Young & Elite Talents Project
- Program for Innovative Research Team in University of Ministry of Education of China [IRT_17R48]
Graphene/silicon Schottky barrier solar cells (SBSCs) are cost-effective and efficient for solar energy harvesting. The introduction of graphene oxide quantum dots (GOQDs) with tunable thickness enhances the performance of Gr/Si SBSCs, achieving a power conversion efficiency of 13.67% with optimal barrier thickness and particle size.GOQDs provide extra band bending in Gr/Si SBSCs, further improving their efficiency for photovoltaic applications.
Graphene/silicon (Gr/Si) Schottky barrier solar cells (SBSCs) are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing. The interfacial barrier between graphene and silicon facilitates the reducing excessive carrier recombination while accelerating the separation processes of photo-generated carriers at the interface, which empowers the performance of Gr/Si SBSCs. However, the difficulty to control the interface thickness prevents its application. Here, we introduce the graphene oxide quantum dots (GOQDs) as a unique interfacial modulation species with tunable thickness by controlling the GOQDs particle size. The power conversion efficiency (PCE) of 13.67% for Gr/Si-based SBSC with outstanding stability in the air is obtained with the optimal barrier thickness (26 nm) and particle size (4.15 nm) of GOQDs. The GOQDs in Gr/Si-based SBSCs provide the extra band bending which further enhances the PCE for its photovoltaic applications.
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