High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory

A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 10(6), fast turn on speed, and good endurance (10(8) switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.

Automated summary

The proposed selector based on a nanoscale HfO2 film with As ion implantation has low threshold voltage, high driving current, large selectivity, fast turn on speed, and good endurance, making it applicable for high-density stacked PCM applications.