Structural analysis of silicon carbide prepared from two types of carbon sources

Silicon carbide (SiCcs and SiCdk) powders have been prepared from Murzuq silica sand (fine silica) as a silica source(Mws), citrus Sinensis tree branches (cs), and dates kernels (dk) taken as carbon sources for industrial applications. The sol-gel method was employed to prepare the samples. The samples were calcinated in a bath containing silica/carbon mixture for 6 h. The X-ray diffraction (XRD) results revealed that both samples with different carbon sources contained three polytypes of 6H, 21R, and 3C-SiC. The morphology of the samples has been measured using the field emission scanning microscope (FESEM). Large particles accompanied by thin rod-like structures with average lengths between 0.3 and 2 lm were observed for the SiCcs sample. The morphology of the SiCdk sample showed large particles and some holes. Raman spectra of both samples showed peaks located at 1356 cm-1 and 1596 cm-1 related to D and G peaks, respectively. (c) 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the National Conference on Functional Materials: Emerging Technologies and Applications in Materials Science.

Automated summary

Silicon carbide powders were prepared using the sol-gel method with different carbon sources. XRD results showed the presence of three polytypes, while FESEM observations revealed various particle morphologies. Raman spectra exhibited characteristic peaks.