4.7 Article

Solution process formation of high performance, stable nanostructured transparent metal electrodes via displacement-diffusion-etch process

期刊

NPJ FLEXIBLE ELECTRONICS
卷 6, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41528-022-00134-2

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资金

  1. Research Grant Council of Hong Kong [15304919, 15218517, C5037-18G]
  2. Hong Kong Polytechnic University (ZVRP) [8-8408, 1CDA5]
  3. Shenzhen Science and Technology Innovation Commission [JCYJ20200109105003940]
  4. National Natural Science Foundation of China [51961165102]
  5. Guangdong-Hong Kong-Macao Joint Laboratory for PhotonicThermal-Electrical Energy Materials and Devices (GDSTC) [2019B121205001]

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This paper presents the fabrication of high-performance nanostructured transparent metal electrodes via the displacement-diffusion-etch (DDE) process, and demonstrates their potential in flexible optoelectronic devices.
Transparent electrodes (TEs) with high chemical stability and excellent flexibility are critical for flexible optoelectronic devices, such as photodetectors, solar cells, and light-emitting diodes. Ultrathin metal electrode (thickness less than 20 nm) has been a promising TE candidate, but the fabrication can only be realized by vacuum-based technologies to date, and require tedious surface engineering of the substrates, which are neither ideal for polymeric based flexible applications nor suitable for roll-to-roll large-scale manufacture. This paper presents high-performance nanostructured transparent metal electrodes formation via displacement-diffusion-etch (DDE) process, which enables the solution-processed sub-20-nm-thick ultrathin gold electrodes (UTAuEs) on a wide variety of hard and soft substrates. UTAuEs fabricated on flexible polyethylene terephthalate (PET) substrates show a high chemical/environmental stability and superior bendability to commercial flexible indium-tin-oxide (ITO) electrodes. Moreover, flexible organic solar cells made with UTAuEs show similar power conversion efficiency but much enhanced flexibility, in comparison to that of ITO-based devices.

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