Electronic transport of ZnSnSb2 for thermoelectric application

Thermoelectric (TE) devices convert heat energy directly into electricity, which requires highly efficient, eco-friendly, and reliable materials. The chalcopyrite compound zinc tin antimonide (ZnSnSb2) is a promising thermoelectric material that has high electrical conductivity, non-toxic, low cost, and plenty in nature. The ZnSnSb2 was synthesized by simple one-step Solid-State Reaction (SSR) and studied their microstructural and electronic transport properties. The X-Ray Diffraction (XRD) pattern of the ZnSnSb2 exhibited a tetragonal crystal structure with c/a ratio of 2 that indicates the valance band was degenerate, which was the reason for the low electrical resistivity of ZnSnSb2 (0.32 m Omega-cm at 325 K). Furthermore, the thermopower exhibited p-type behaviour and the maximum power factor ZnSnSb2 was found 39 mu W/m-K-2 at 542 K. (C) 2021 Elsevier Ltd. All rights reserved.

Automated summary

The chalcopyrite compound zinc tin antimonide (ZnSnSb2) is a promising thermoelectric material with high electrical conductivity, non-toxicity, low cost, and abundant availability. The synthesis of ZnSnSb2 by a simple one-step Solid-State Reaction method and the characterization of its microstructural and electronic transport properties were studied.