Fabrication of solution-processable OFET memory using a nano-floating gate based on a phthalocyanine-cored star-shaped polymer

Solution-processed organic field-effect transistor (OFET) memory devices are fabricated using a blend film of 6,13-bis(triisopropylsilylethynyl)pentacene and phthalocyanine-cored star-shaped polystyrene. A highly crystalline organic semiconductor thin film was obtained on the star-shaped polymer with charge-trapping sites via a one-pot spin-coating process through vertical phase separation, which is advantageous for OFET memory device applications. The resultant OFET device demonstrated a charge carrier mobility of 0.10 cm(2) V-1 s(-1) and an on/off current ratio of 10(6). Upon application of a gate bias, a substantial reversible threshold shift was observed, along with long charge-retention ability, thereby confirming the memory characteristics of the device.

Automated summary

In this study, solution-processed organic field-effect transistor (OFET) memory devices were fabricated using a special blend film preparation method. The resulting devices showed good charge carrier mobility and on/off current ratio, as well as substantial reversible threshold shift and long charge retention ability.