期刊
SCIENCE ADVANCES
卷 8, 期 6, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abj5881
关键词
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资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231, KC3103, KC23MP]
- Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]
- U.S. DOE Office of Science User Facility [DE-AC02-05CH11231]
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0014430]
- NSF through the University of California Irvine Materials Research Science and Engineering Center [DMR-2011967]
- NSF [ECCS-2026822]
- Applied Materials Inc.
- Suzhou Industrial Park
- Intel Corporation/FEINMAN Program
- MOE Technologies Incubation Scholarship from Taiwan
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-05CH11231]
This article introduces the characteristics of ferroelectric semiconductors and halide perovskites, as well as their potential in designing functional photoferroelectrics. The authors report the discovery of ferroelectricity in all-inorganic halide perovskites and provide evidence through calculations and experiments.
Ferroelectric semiconductors are rare materials with both spontaneous polarizations and visible light absorptions that are promising for designing functional photoferroelectrics, such as optical switches and ferroelectric photovoltaics. The emerging halide perovskites with remarkable semiconducting properties also have the potential of being ferroelectric, yet the evidence of robust ferroelectricity in the typical three-dimensional hybrid halide perovskites has been elusive. Here, we report on the investigation of ferroelectricity in all-inorganic halide perovskites, CsGeX3, with bandgaps of 1.6 to 3.3 eV. Their ferroelectricity originates from the lone pair stereochemical activity in Ge (II) that promotes the ion displacement. This gives rise to their spontaneous polarizations of similar to 10 to 20 mu C/cm(2), evidenced by both ab initio calculations and key experiments including atomic-level ionic displacement vector mapping and ferroelectric hysteresis loop measurement. Furthermore, characteristic ferroelectric domain patterns on the well-defined CsGeBr3 nanoplates are imaged with both piezo-response force microscopy and nonlinear optical microscopic method.
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