期刊
NATURE ENERGY
卷 1, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NENERGY.2016.15
关键词
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资金
- US Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy [DE AC36 08GO28308]
- Oak Ridge National Laboratory's Center for Nanophase Materials Sciences
- Scientific User Facilities Division, Office of Basic Energy Sciences, DOE
- DOE-Nuclear Energy University Program [DE-NE0000693]
CdTe solar cells have the potential to undercut the costs of electricity generated by other technologies, if the open-circuit voltage can be increased beyond 1V without significant decreases in current. However, in the past decades, the open-circuit voltage has stagnated at around 800-900mV. This is lower than in GaAs solar cells, even though GaAs has a smaller bandgap; this is because it is more difficult to achieve simultaneously high hole density and lifetime in II-VI materials than in III-V materials. Here, by doping the CdTe with a Group V element, we report lifetimes in single-crystal CdTe that are nearly radiatively limited and comparable to those in GaAs over a hole density range relevant for solar applications. Furthermore, the deposition on CdTe of nanocrystalline CdS layers that form non-ideal heterointerfaces with 10% lattice mismatch impart no damage to the CdTe surface and show excellent junction transport properties. These results enable the fabrication of CdTe solar cells with open-circuit voltage greater than 1V.
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