Probing the long-lived photo-generated charge carriers in transition metal dichalcogenides by time-resolved microwave photoconductivity

Understanding the dissociation of excitons into long-lived free charge carriers is a crucial issue when considering the applications of transition metal dichalcogenides (excitonic semiconductors) oriented toward the use of solar energy (such as photovoltaics or photocatalysis). In our work, long-lived carriers have been observed by time-resolved microwave photoconductivity (TRMC) for the first time in both atomically thin and bulk MoS2, MoSe2, WS2, and WSe2 crystals. The lifetime of majority carriers is close to microseconds and can even reach several microseconds due to different contribution of surface and defect states, as well as surface band bending (bulk). The three components depend on the material and vary from sample to sample, therefore determining the dynamics of the TRMC signal. The rise time of TRMC signal was found to be in the range of 0.1-0.2 mu s and as it depends on the studied material it can be speculated that it is related to the dissociation time of excitons captured by traps.

Automated summary

In this study, long-lived free charge carriers generated from excitons in MoS2, MoSe2, WS2, and WSe2 crystals were observed using TRMC for the first time. The lifetime of these carriers depends on surface and defect states as well as surface band bending.