期刊
IEEE ACCESS
卷 10, 期 -, 页码 21759-21773出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2021.3139443
关键词
GaN HEMT; trapping effects; current collapse; suppression methods
资金
- Fundamental Research Funds for the Central Universities [QTZX2172]
This paper summarizes the investigations of trapping effects and discusses methods to suppress them in AlGaN/GaN HEMTs. Understanding the inner mechanism and comparing different methods can improve the device performance.
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high power and high frequency applications. However, the existence of damages, defects and dislocations still degrade the device features because of trapping effects. In this paper, investigations of trapping effects are summarized and discussed to understand the inner mechanism, including the gate-lag and drain-lag transient responses, the current collapse of pulsed IDS -Vps, the dependence of frequency dispersion, the transient current reduction with pulsed-RF excitation and the kink effect. In addition, recent methods of suppressing trapping effects are reviewed, including surface passivation, GaN cap layer, gate/source field plate, buffer engineering and structure modification. The profits and shortages of each method are compared and discussed.
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