4.6 Article

An Active Metamaterial Absorber With Ultrawideband Continuous Tunability

期刊

IEEE ACCESS
卷 10, 期 -, 页码 25290-25295

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2022.3155688

关键词

Absorption; PIN photodiodes; Resonant frequency; Resistance; Bandwidth; Reflectivity; Inductors; Electromagnetic absorbers; active metamaterials; PIN diodes; ultrawideband tunability

资金

  1. National Natural Science Foundation of China (NSFC) [61801207, 91963128, 62071215, 61731010]
  2. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
  3. Fundamental Research Funds for the Central Universities
  4. Jiangsu Provincial Key Laboratory of Advanced Manipulating Technique of Electromagnetic Wave

向作者/读者索取更多资源

This paper proposes an active metamaterial absorber loaded with PIN diodes, which achieves broadband absorption at different frequencies by adjusting the bias currents of the diodes. The absorber has excellent performance and tunable absorption frequencies.
In this paper, an active metamaterial (MM) absorber loaded with PIN diodes is proposed. By adjusting the bias currents of PIN diodes to change the value of the introduced equivalent resistance, the Q factors of multiple resonances of the whole structure are altered. Therefore, multiple broadband absorption states with moderate absorption performance at different frequencies are obtained. These states cover continuously tunable absorption frequencies in an ultrabroad frequency band. Bias circuits for PIN diodes are also specially designed to obtain polarization-insensitive absorption performance. Optimizing works were carried out by analyzing the operating mechanism based on the simulated field distribution and power loss distribution. The presented absorber covers an ultrawideband absorption bandwidth with a reflection coefficient below -10 dB from 0.78 GHz to 4.62 GHz (142.2% in relative bandwidth) by adjusting the PIN diodes. It is worth noting that the absorption bandwidth of the low-resistance state reaches 21.0% in the P band, which greatly improves performance in the low-frequency regime. The absorber also shows good angular stability under oblique incident angles from 0 degrees to 30 degrees. In addition, the total thickness of the absorber is only 1/16 of the wavelength at the lowest operating frequency with an areal density of 2.06 kg/m(2).

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