4.4 Article

Temperature Dependent Raman Spectroscopy and Sensing Behavior of Few Layer SnSe2 Nanosheets

期刊

CHEMISTRYSELECT
卷 1, 期 16, 页码 5380-5387

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/slct.201601347

关键词

Tin diselenide; Nanosheets; humidity sensing; Photo sensing; Phonon Shifts

资金

  1. Department of Science and Technology (Government of India) [SR/S2/RJN-130/2012]
  2. NCL-MLP project [028626]
  3. DST-SERB Fast-track Young scientist project [SB/FT/CS-116/2013]
  4. Broad of Research in Nuclear Sciences (BRNS) (Government of India) [34/14/20/2015]
  5. INUP IITB project - DeitY, MCIT, Government of India
  6. CINT Proposal (USA) [U2015 A0083]

向作者/读者索取更多资源

Two- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97% relative humidity (RH). The ob-served sensitivity of similar to 81% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.

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