Improved highly efficient Dion-Jacobson type perovskite light-emitting diodes by effective surface polarization architecture

Quasi-two-dimensional (quasi-2D) perovskites are emerging as promising materials for highly stable light-emitting diodes (LEDs). However, their lower charge transport mobilities and higher defect densities may constrain their light-emitting efficiency. Here, we combine an excessive-salt-assisted (ESA) process with antisolvent treatments to inhibit the defects in Dion-Jacobson-type perovskite LEDs. Such a method could improve the film quality and recombination efficiency. By further investigation, we found that artificially building a bulk junction interface and enhancing surface polarization could play a more important role in promoting the ability of charge carrier injection and recombination for high-performance LED devices. Accordingly, the DJ-type quasi-2D perovskite LED can achieve a high external quantum efficiency (EQE) of 7.1%.

Automated summary

Quasi-2D perovskites show promise for highly stable LEDs. Researchers inhibit defects in Dion-Jacobson-type perovskite LEDs through an excessive-salt-assisted process and antisolvent treatments. Building a bulk junction interface and enhancing surface polarization improve charge carrier injection and recombination in high-performance LED devices.