4.6 Article

Minimal Effect of the Hole-Transport Material Ionization Potential on the Open-Circuit Voltage of Perovskite Solar Cells

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ACS ENERGY LETTERS
卷 1, 期 3, 页码 556-560

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AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.6b00270

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  1. Department of Energy's Sunshot NextGen III program [DE-EE0006707]

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Hole-transport material optimization is an important step toward maximizing the efficiency of perovskite solar cells. Here, we investigate the role of one hole-transport material property, the ionization potential, on the performance of perovskite solar cells. We employ a device architecture that allows us to systematically tune the ionization potential while avoiding any impact to other device parameters, and we find that for a wide range of ionization potentials the photovoltaic performance is minimally affected. This finding relaxes the requirement for the development of hole-transport materials with particular ionization potentials, allowing for the optimization of hole-transport materials that can improve performance in differing ways such as through increased stability or decreased parasitic absorption.

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