期刊
ACS ENERGY LETTERS
卷 1, 期 2, 页码 402-408出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.6b00217
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资金
- Department of Energy SunShot Initiative BRIDGE program [DE-EE0005957]
- Research Corporation for Scientific Advancement through a Scialog Scholar Award
- NSF [DGE-0829517]
- Molecular Foundry, Lawrence Berkeley National Laboratory [DE-AC02-05CH1123]
- M. J. Murdock Charitable Trust
- W. M. Keck Foundation
- ONAMI
Close-spaced vapor transport is a plausibly low-cost, high-rate method to grow HI-V materials for photovoltaic and photoelectrochemical device applications. We report the first homoepitaxial growth of GaAs microstructures on (100)- and (111)B-oriented GaAs substrates using patterned SiOx and Al2O3 masks and show that the resulting microstructured GaAs is an efficient semiconductor absorber for photovoltaic and photo-electrochemical applications. Cross-sectional transmission electron microscopy reveals an unusually low density of twin-plane defects in the (111)-oriented microstructures and the occurrence of stacked twin-plane defects in the (100)-oriented microstructures. Nonaqueous photoelectrochemical measurements show similar short-circuit currents of 9.7 and 9.1 mA cm(-2) for (100)- and (111)-oriented microstructures, respectively, with promising external quantum efficiencies. Together, the low twin density and good electronic properties indicate that micro- or nanostructures grown by selective area epitaxy in close-spaced vapor transport are promising for device applications that take advantage of their three-dimensional structure.
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