4.6 Article

Ultrasensitive Self-Powered Position-Sensitive Detector Based on n-3C-SiC/p-Si Heterojunctions

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Nanoscience & Nanotechnology

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Tuan-Hung Nguyen et al.

Summary: This study successfully generated a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration, resulting in a high lateral photovoltage. The potential of lateral photovoltaic and self-powered devices was demonstrated. Additionally, by explaining the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory, the working mechanism and behavior of the lateral photovoltaic effect were further explored.

ACS APPLIED MATERIALS & INTERFACES (2021)

Article Chemistry, Physical

Ultra-sensitive self-powered position-sensitive detector based on horizontally-aligned double 3C-SiC/Si heterostructures

Abu Riduan Md Foisal et al.

Summary: The innovative nanoarchitecture proposed in this work allows for the effective generation, separation, and migration of photogenerated carriers, resulting in ultra-high sensitivity position-sensitive detectors that are self-powered and industry-compatible.

NANO ENERGY (2021)

Article Physics, Applied

Effects of photogenerated-hole diffusion on 3C-SiC/Si heterostructure optoelectronic position-sensitive detector

Hung Nguyen et al.

Summary: This study investigates the influence of photogenerated holes and their diffusion path lengths on the sensing performance of PSD devices based on 3C-SiC/Si heterostructures. Devices with short electrode spacings demonstrate excellent position-sensitivity, achieving a maximum sensitivity of 470 mV mm(-1) with a device spacing of 300 μm under 980 nm laser illumination. The findings provide insights for designing highly sensitive PSDs and exploring their full potentials.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Article Chemistry, Physical

Self-powered monolithic accelerometer using a photonic gate

Thanh Nguyen et al.

NANO ENERGY (2020)

Article Materials Science, Multidisciplinary

Opto-electronic coupling in semiconductors: towards ultrasensitive pressure sensing

Thanh Nguyen et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Engineering, Electrical & Electronic

SnSe/SiO2/Si Heterostructures for Ultrahigh-Sensitivity and Broadband Optical Position Sensitive Detectors

Lanzhong Hao et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Engineering, Electrical & Electronic

Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction

Abu Riduan Md Foisal et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

Article Nanoscience & Nanotechnology

3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect

Abu Riduan Md Foisal et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Article Multidisciplinary Sciences

Giant piezoresistive effect by optoelectronic coupling in a heterojunction

Thanh Nguyen et al.

NATURE COMMUNICATIONS (2019)

Article Materials Science, Multidisciplinary

Thermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing

Toan Dinh et al.

ADVANCED ENGINEERING MATERIALS (2019)

Article Materials Science, Multidisciplinary

Phonon-limited carrier mobility and temperature-dependent scattering mechanism of 3C-SiC from first principles

Fanchen Meng et al.

PHYSICAL REVIEW B (2019)

Review Nanoscience & Nanotechnology

Multimode silicon photonics

Chenlei Li et al.

NANOPHOTONICS (2019)

Article Chemistry, Multidisciplinary

Fast, Self-Driven, Air-Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

Long-Hui Zeng et al.

ADVANCED FUNCTIONAL MATERIALS (2018)

Article Chemistry, Physical

Giant lateral photovoltaic effect in MoS2/SiO2/Si p-i-n junction

L. Z. Hao et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2018)

Review Automation & Control Systems

Review of Silicon Carbide Power Devices and Their Applications

Xu She et al.

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2017)

Article Crystallography

Carbonization and transition layer effects on 3C-SiC film residual stress

R. Anzalone et al.

JOURNAL OF CRYSTAL GROWTH (2017)

Article Multidisciplinary Sciences

Photovoltage field-effect transistors

Valerio Adinolfi et al.

NATURE (2017)

Article Nanoscience & Nanotechnology

Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS2/Si Junctions

Chang Hu et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

Jaehyun Yang et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Engineering, Electrical & Electronic

Design and Modeling of GeSn-Based Heterojunction Phototransistors for Communication Applications

Guo-En Chang et al.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2016)

Article Engineering, Electrical & Electronic

High-Responsivity GaN/InGaN Heterojunction Phototransistors

Tsung-Ting Kao et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2016)

Article Chemistry, Physical

β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

X. C. Guo et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

Review Engineering, Electrical & Electronic

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Hoang-Phuong Phan et al.

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS (2015)

Article Materials Science, Multidisciplinary

Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Li Wang et al.

THIN SOLID FILMS (2011)

Article Materials Science, Multidisciplinary

Photoluminescence dynamics and reduced Auger recombination in Si1-xGex/Si superlattices under high-density photoexcitation

Takeshi Tayagaki et al.

PHYSICAL REVIEW B (2009)

Article Physics, Applied

Improved position sensitive detectors using high resistivity substrates

J. Henry et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)