Synthesis and characterization of CdTe/CdSe thin film on glass/ITO by electrodeposition at room temperature

In this study, a CdTe thin film was formed on glass/indium tin oxide (ITO) substrate at room temperature using electrodeposition. The film was then annealed at 300 degrees C to investigate its effect on the film's optical, morphological, structural and electrical properties. A CdSe thin film was then electrodeposited at room temperature on the annealed p-type glass/ITO/CdTe film. The two films were prepared at room temperature without precursors or additives, using very low concentrations of chemicals. This significantly reduces the cost of production and minimizes its environmental impact. The as-deposited and annealed glass/ITO/CdTe thin film and glass/ITO/CdTe/CdSe heterojunction thin film were characterized using UV-vis spectrometer, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Hall effect measurement system. The results showed that p-CdTe/n-CdSe heterojunction thin film was nanostructured and polycrystalline. This film can be important for solar cells due to its charge carrier density (1.95 x 10(20) cm(-3)), resistivity value (2.42 x 10(-3 )Omega-cm), and appropriate optical bandgap (1.64 eV) meeting the solar spectrum.

Automated summary

In this study, a CdTe thin film was prepared by electrodeposition at room temperature and annealed. Then, a CdSe thin film was deposited on the annealed CdTe film. Characterization results showed that the heterojunction thin film has suitable optical and electrical properties for solar cell applications.