Charge kinetics across a negatively biased semiconducting plasma-solid interface

An investigation of the self-consistent ambipolar charge kinetics across a negatively biased semiconducting plasma-solid interface is presented. For the specific case of a thin germanium layer with nonpolar electronphonon scattering, sandwiched between an Ohmic contact and a collisionless argon plasma, we calculate the current-voltage characteristic and show that it is affected by the electron microphysics of the semiconductor. We also obtain the spatially and energetically resolved fluxes and charge distributions inside the layer, visualizing thereby the behavior of the charge carriers responsible for the charge transport. Albeit not quantitative, because of the crude model for the germanium band structure and the neglect of particle-nonconserving scattering processes, such as impact ionization and electron-hole recombination, which at the energies involved cannot be neglected, our results clearly indicate (i) the current through the interface is carried by rather hot carriers and (ii) the perfect absorber model, often used for the description of charge transport across plasma-solid interfaces, cannot be maintained for semiconducting interfaces.

Automated summary

This study investigates the self-consistent ambipolar charge kinetics across a negatively biased semiconducting plasma-solid interface. By calculating and visualizing, the study shows that the current-voltage characteristic is influenced by the electron microphysics of the semiconductor, indicating that the perfect absorber model commonly used for plasma-solid interfaces cannot be maintained for semiconducting interfaces.