Preparation and characteristics study of nano-porous silicon UV photodetector

In this study, influence of rapid thermal oxidation RTO and embedding of gold nanoparticles on the performance of porous silicon photodetector synthesised by anodization technique were investigated. Anodization technique was used to fabricate porous silicon photodetector at 10 mA/cm(2) for 10 min. The structural, morphological, and photoluminescence properties of porous silicon and gold nanoparticles were investigated. Dark and illuminated current-voltage I-V characteristics, linearity, spectral responsivity, detectivity, and pulsed responsivity of photodetector were investigated before and after RTO and after incorporation of gold nanoparticles. The photosensitivity of nano-porous silicon photodetector at 365 nm was increased from 44 to 154 mA/W and to 200 mA/W at 10 V bias after RTO process and incorporating the gold nanoparticles into the silicon matrix, respectively.