The Properties of the Polaron in III-V Compound Semiconductor Quantum Dots Induced by the Influence of Rashba Spin-Orbit Interaction

We study the ground state energy (GSE) of weak coupling polaron confined in quantum dots (QD) of III-V compound semiconductors using the linear combinatorial operator (LCO) and the Lee-Low-Pines unitary transformation (LLPUT) method. Our calculated results show that the GSE of the polaron splits into two branches due to the Rashba spin-orbit (SO) coupling effect, and spin splitting spacing is influenced by Rashba SO coupling strength and the coupling strength and the effective mass of III-V compound semiconductor material. That reveals the SO coupling properties of weak coupling polaron in the QD of III-V compound semiconductors, which provides a theoretical platform for the fabrication of nanometer devices.

Automated summary

This study investigates the ground state energy of weak coupling polarons confined in III-V compound semiconductor quantum dots. The results demonstrate that the ground state energy splits into two branches due to the Rashba spin-orbit coupling effect. The spin splitting spacing is influenced by the strength of the Rashba spin-orbit coupling and the coupling strength and effective mass of the III-V compound semiconductor material.