期刊
NANOSCALE
卷 14, 期 19, 页码 7242-7249出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2nr00207h
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资金
- CENTERA Laboratories
- Spanish Ministry of Science, Innovation and Universities
- FEDER [RTI2018-097180-B-100]
- FEDER/Junta de Castilla y Leon Research [SA256P18, SA121P20]
- European Union under the European Regional Development Fund [MAB/2018/9]
This study demonstrates that mobility fluctuations are the dominant mechanism of low-frequency electronic noise in high-quality graphene, providing important insights for its applications in electronics and understanding the origin of 1/f noise in any electronic device.
The nature of the low-frequency 1/f noise in electronic materials and devices is one of the oldest unsolved physical problems (f is the frequency). The fundamental question of the noise source-fluctuations in the mobility vs. number of charge carriers-is still debated. While there are several pieces of evidence to prove that the 1/f noise in semiconductors is due to the fluctuations in the number of the charge carriers, there is no direct evidence of the mobility fluctuations as the source of 1/f noise in any material. Herein, we measured noise in an h-BN encapsulated graphene transistor under the conditions of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately mu B-0 approximately equal to 1 (mu(0) is the electron mobility). This observation proves unambiguously that mobility fluctuations are the dominant mechanism of electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device.
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