Electrostatic control of photoluminescence from A and B excitons in monolayer molybdenum disulfide

Tailoring excitonic photoluminescence (PL) in molybdenum disulfide (MoS2) is critical for its various applications. Although significant efforts have been devoted to enhancing the PL intensity of monolayer MoS2, simultaneous tailoring of emission from both A excitons and B excitons remains largely unexplored. Here, we demonstrate that both A-excitonic and B-excitonic PL of chemical vapor deposition (CVD)-grown monolayer MoS2 can be tuned by electrostatic doping in air. Our results indicate that the B-excitonic PL changed in the opposite direction compared to A-excitonic PL when a gate voltage (V-g) was applied, both in S-rich and Mo-rich monolayer MoS2. Through the combination of gas adsorption and electrostatic doping, a 12-fold enhancement of the PL intensity for A excitons in Mo-rich monolayer MoS2 was achieved at V-g = -40 V, and a 26-fold enhancement for the ratio of B/A excitonic PL was observed at V-g = +40 V. Our results demonstrate not only the control of the conversion between A(0) and A(-), but also the modulation of intravalley and intervalley conversion between A excitons and B excitons. With electrostatic electron doping, the population of B excitons can be promoted due to the enhanced intravalley and intervalley transition process through electron-phonon coupling. The electrostatic control of excitonic PL has potential applications in exciton physics and valleytronics involving the B excitons.

Automated summary

Excitonic photoluminescence (PL) in monolayer MoS2 can be tailored by electrostatic doping, allowing for the control of both A excitons and B excitons. Gate voltage manipulation results in significant changes in both A-excitonic and B-excitonic PL, with the ratio of B/A excitonic PL showing a 26-fold enhancement. This electrostatic control of excitonic PL holds potential for applications in exciton physics and valleytronics involving B excitons.