期刊
NEUROMORPHIC COMPUTING AND ENGINEERING
卷 2, 期 2, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2634-4386/ac57cb
关键词
2D materials; ferroelectrics; memory; neuromorphic computing
资金
- A*STAR Science and Engineering Research Council [A2083c0061]
- Ministry of Education AcRF Tier 1 Grant [MOE-T2EP50120-0016]
- Ministry of Education AcRF Tier 2 Grant [MOE-T2EP50120-0016]
- National Research Foundation, Prime Minister's Office, Singapore, under its Competitive Research Programme [NRF-CRP24-2020-0002]
Ferroelectric memory devices based on 2D materials are recognized as promising building blocks for brain-like neuromorphic computing due to their fast-switching speed and ultra-low power consumption. The unique properties of 2D materials and their high compatibility with existing technology make them potential candidates for extending state-of-the-art ferroelectric memory technology into atomic-thin scale.
Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interest in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review will highlight the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.
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