期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 4, 页码 1669-1677出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c01312
关键词
perovskite light-emitting diodes; anthracene; electron transport layer; electron injection; interfacial defects
资金
- Key-Area Research and Development Program of GuangDong Province [2020B010178001]
- Shenzhen Hong Kong Innovation Circle Joint RD Project [SGDX20190918105201704]
- Shenzhen Fundamental Research Program [GXWD20201-231165807007 - 20200810113811001]
- Shenzhen Science and Technology Research Grant [JCYJ20170818085627903]
- DongGuan Innovative Research Team Program [2018607202005]
Exploring multifunctional charge transport materials with well-matched energy-levels alignment and compatible interfaces is a potential approach towards high-performance perovskite light-emitting diodes (PeLEDs). In this study, an anthracene derivative, BAEBi, is demonstrated as an efficient electron transport layer (ETL) and surface passivation agent for near-infrared quasi 2D PeLEDs. BAEBi improves charge-carrier balance, suppresses interfacial defects, and enhances device performance, demonstrating potential for solid-state lighting and high-resolution displays.
Exploring multifunctional charge transport materials with well-matched energy-levels alignment and compatible interfaces is deemed a potential approach toward high-performance perovskite light-emitting diodes (PeLEDs). Herein, an anthracene derivative, 1-[4-(10-[1,1'biphenyl]-4-yl-9-anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (BAEBi), is demonstrated as an efficient electron tranport layer (ETL) as well as an effective surface passivation agent for near-infrared (NIR) quasi twodimensional (Q-2D) PeLEDs. Owing to the promising electron injection and transport capability of BAEBi, an improved charge-carrier balance is attained in rather hole-dominant PeLEDs. Meanwhile, BAEBi assisted to significantly mitigate the perovskite/ETL interfacial defects, rendering a pinhole-free smooth film with quite low roughness and ameliorated exciton lifetime. Consequently, BAEBi-containing NIR Q-2D PeLEDs manifested a low turn-on voltage of 2.5 V with a decent external quantum efficiency (EQE) of 9.2% and a peak radiance of 127 W sr-1 m-2; these values are, respectively, similar to 1.5- and 15-fold higher compared to that of a commonly used ETL, 2,2',2.-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi). Importantly, the BAEBi-incorporating champion PeLED exhibited significantly curtailed efficiency roll-off and prolonged operational stability. These findings reveal an ingenious solution to address the charge imbalance issue and suppress the interfacial defects in PeLEDs that would spur further development of this emerging technology toward efficient solid-state lighting and high-resolution displays.
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