期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 4, 页码 1800-1806出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00054
关键词
indium tin zinc oxide (ITZO); thin-film transistors (TFTs); bilayer channel; bias stress stability; oxygen compensation
资金
- Korea Basic Science Institute (National Research Facilities and Equipment Center) - Ministry of Education [2021R1A6C101A405]
- Competency Development Program for Industry Specialists of the Korean Ministry of Trade, Industry and Energy (MOTIE) [P0002397]
- Korean Ministry of Trade, Industry and Energy (MOTIE) [P0006305]
- Korea Institute for Advancement of Technology (KIAT) [P0006305]
- Korea Evaluation Institute of Industrial Technology (KEIT) [P0006305] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2021R1A6C101A405] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study investigates the performance of indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures. The results show that bilayer-channel ITZO TFTs exhibit enhanced electrical performance and bias stress stability compared to single-channel ITZO TFTs. The electrical properties of the bilayer-channel films can be fine-tuned by adjusting their oxygen stoichiometry using an oxygen-compensated capping layer.
Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are investigated. The electrical performance and bias stress stability of bilayer-channel ITZO TFTs are enhanced in comparison with those of single-channel ITZO TFTs. The bilayer channel consists of an oxygen-uncompensated channel layer and an oxygen-compensated capping layer, while the single channel is an oxygen-uncompensated channel layer. The electrical properties of the bilayer-channel films are fine-tuned by adjusting their oxygen stoichiometry using the oxygen-compensated capping layer. The X-ray photoelectron spectroscopy measurements reveal that the bilayer channel shows advantages over the single channel in terms of increased metal oxide concentration and decreased oxygen vacancy and hydroxyl concentration. As a result, the bilayer-channel ITZO TFT exhibits a saturation field-effect mobility of 17.31 cm(2)/Vs, a sub-threshold swing of 0.24 V/dec, and a good operational bias stress stability in comparison with the single-channel TFT. This work demonstrates that the bilayer-channel ITZO TFTs have great potential for next-generation display applications.
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