期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 4, 页码 1518-1524出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c01035
关键词
hBN encapsulated graphene; ballistic graphene cross junction; bridge ballistic graphene device; ballistic rectification; ballistic diode; high responsivity
资金
- National Research Foundation of Korea (NRF) - Korea Government (MSIT) [NRF-2020R1A6A1A03043435, 2020R1A2C1099862]
- Next-generation Engineering Researchers Development Program through the National Research Foundation of Korea [NRF-2019H1D8A2106002]
- MOTIE of the Republic of Korea [20194010000130]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20194010000130] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2020R1A2C1099862] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, a ballistic rectifier based on graphene encapsulated in hexagonal boron nitride is introduced. With its asymmetric geometry and the exploitation of the ratcheting effect, the device can operate successfully and provides excellent performance at room temperature, achieving estimated responsivities of 38,000 V/W for holes and 23,000 V/W for electrons, which are among the highest values reported for a ballistic device to date.
The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device's asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device's estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.
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