Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design

The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device's asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device's estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.

Automated summary

In this study, a ballistic rectifier based on graphene encapsulated in hexagonal boron nitride is introduced. With its asymmetric geometry and the exploitation of the ratcheting effect, the device can operate successfully and provides excellent performance at room temperature, achieving estimated responsivities of 38,000 V/W for holes and 23,000 V/W for electrons, which are among the highest values reported for a ballistic device to date.