期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 3, 页码 1351-1358出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00102
关键词
metal halide perovskite; photodetector; flexible device; epitaxial film; pulsed laser deposition
资金
- National Natural Science Foundation of China [92164206, 11774202]
- Shandong Provincial Major Scientific and Technological Innovation Project [2019JZZY020211]
- National Key R&D Program of China [2016YFA0301204]
- 111 Project [B13029]
The growth of high-quality inorganic halide perovskite films has gained attention for their applications in solar cells, photodetectors, and communications. This study successfully prepared a centimeter-sized CsPbBr3 film on a flexible muscovite substrate using pulsed laser deposition. By optimizing the deposition conditions, a pure cubic phase CsPbBr3 film with van der Waals epitaxy was achieved. The CsPbBr3 film was then assembled into a planar photodetector, demonstrating low dark current, high sensitivity to light, and ultrafast response time. Additionally, the CsPbBr3-based photodetectors showed good long-term stability and bending stability, indicating their potential for flexible optoelectronic applications.
Growth of high-quality inorganic halide perovskite films has attracted increasing attention in recent years for their important applications in solar cells, photodetectors, and communications. In this study, a centimeter-sized inorganic perovskite film of CsPbBr3 was prepared on an atomically flat flexible muscovite substrate by using pulsed laser deposition. Van der Waals epitaxial growth of pure cubic phase CsPbBr3 film is achieved by optimizing deposition conditions. In order to explore its potential in optoelectronic applications, the CsPbBr3 perovskite film was assembled into a planar photodetector. Benefitting from the high crystallinity of the film, the photodetector demonstrates an ultralow dark current and a high sensitivity to light. Under 10 V bias voltage and 405 nm irradiation, the device presents a high photocurrent on/off ratio of 1.1 x 10(5), a specific detectivity of 2.41 x 10(14) Jones, and an ultrafast response time (the rising and decaying times are 42.16 mu s and 44.88 mu s, respectively). Moreover, the CsPbBr3-based photodetectors without encapsulation show good long-term stability (30 days with 6% attenuation) and bending stability. All these results indicate that a CsPbBr3 film epitaxially grown on flexible muscovite is a promising candidate for flexible optoelectronic applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据