Modelling and simulation of silicon solar cells using PC1D

Basic silicon solar cell has been designed and simulated using PC1D simulator. Optimum values for the thicknes of base layer and temperature have been decided from I-V and P-V curve of basic silicon solar cell. It has been observed that as thickness increases, I-sc increases whereas P-max and V-oc decreases. When temperature increases; I-sc remains constant whereas P-max and V-oc decreases. These optimum values enhance the efficiency and fill factor of the silicon solar cell. Simulations in PC1D is an effective way to enhance the performance of silicon solar cell. (C) 2021 Elsevier Ltd. All rights reserved.

Automated summary

A basic silicon solar cell has been designed and simulated using PC1D simulator, and optimum values for the base layer thickness and temperature have been determined. It has been observed that these optimum values enhance the efficiency and fill factor of the solar cell.