On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films

Tungsten oxide thin films were deposited on FTO and Corning glass substrates on Plane and GLAD (?75 degrees) using DC magnetron sputtering and characterized using SEM, XRD, UV-Vis spectrophotometer, and Electrochemical analyzer systematically. Further, a comparative analysis was carried out in which it was observed that the result of surface morphology for plane showed the denser and GLAD showed nanopillars deposition. The amorphous nature of the sample was evident from XRD analysis. Optical transmittance was between 87% and 81% for both plane and GLAD. The Electrochemical studies showed the diffusion coefficient of H+ ions are more compared to Li+ ions for both plane and GLAD and Coloration efficiency was calculated at the scan rates of 10, 30, and 50 mV/s at the wavelength of 500 to 600 nm. Copyright (C) 2022 Elsevier Ltd. All rights reserved.

Automated summary

Tungsten oxide thin films were deposited on FTO and Corning glass substrates using two different deposition methods. The surface morphology and amorphous nature of the samples were characterized, and the optical transmittance was measured. The electrochemical studies showed different diffusion coefficients for H+ and Li+ ions, and the coloration efficiency was calculated at different scan rates.