期刊
PHYSICAL REVIEW B
卷 105, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.105.195202
关键词
-
资金
- National Science Foundation [1820614]
- Basis Foundation for the Advancement of Theoretical Physics and Mathematics
In this article, we present an experimental and theoretical study on the longitudinal electron spin relaxation of shallow donors in ZnO. The study found an inverse-power dependence of the spin relaxation rate on magnetic field, with the dominant contribution coming from the spin-orbit mechanism. Temperature and excitation energy were also found to have an impact on the results.
We present an experimental and theoretical study of the longitudinal electron spin relaxation (T-1) of shallow donors in the direct band-gap semiconductor ZnO. T-1 is measured via resonant excitation of the Ga donor-bound exciton. T-1 exhibits an inverse-power dependence on magnetic field T-1 proportional to B-n, with 4 <= n <= 5, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to T-1 in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest T-1 measured is 480 ms at 1.75 T with increasing T-1 at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据