Fabrication of none-opposite-deposited micro-structure on diamond with the SiO2/Cr bilayer mask

Benefiting from the ultra-broad transparency window, high refractive index and exceptional thermal conductivity, diamond has attracted numerous spotlights on the optical applications and the academic researches. However, the practical deployments of high-quality diamond element were obstructed by the immature manufacture techniques. Here we designed a new mask system for diamond etching that utilizes SiO2 as the main hard mask layer and Cr as the adhesive layer. The cross-section morphology revels three distinct characteristics including a upper slope, a middle vertical sidewall and a trench at the bottom because of the retreat of thick SiO2 mask during the etching process. The completely different etching profile from the previous metal masks has the potential to realize higher aspect ratio etching than traditional metal masks for diamond elements.

Automated summary

The study introduces a new mask system for diamond etching that utilizes SiO2 and Cr layers to improve the etching process and achieve higher aspect ratio than traditional metal masks for diamond elements.