Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

We study the dissipationless transport properties of chiral edge state (CES) in the Chern insulator MnBi2Te4 devices. A near-zero longitudinal resistance and a quantized Hall plateau similar to 0.97h/e(2) up to 22 K are observed. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping (6 similar to 22 K) and thermal activation (>22 K). This indicates nondissipation as well as the chirality of the edge state, in conjunction with the nonlocal measurements. At 2 K, a current of over 1.4 mu A could break the dissipationless transport. Besides, it is found that a p-n junction has almost no influence upon the CES of Chern insulator MnBi2Te4. These present a comprehensive picture of the CES transport in this newly emerging material.

Automated summary

In this study, we investigate the dissipationless transport properties of chiral edge state (CES) in the Chern insulator MnBi2Te4 devices. We observe a near-zero longitudinal resistance and a quantized Hall plateau similar to 0.97h/e(2) up to 22 K. The CES shows different temperature dependencies, with well-preserved dissipationless transport below 6 K, variable range hopping from 6 to 22 K, and thermal activation above 22 K. We also find that a current of over 1.4 mu A at 2 K can break the dissipationless transport. Additionally, a p-n junction has almost no influence on the CES of the Chern insulator MnBi2Te4.