Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation

Short channel Si CMOS have been used as the THz detectors and have found applications in the THz imaging arrays. Sub-terahertz excitation of phase-shifted resonant or overdamped plasma waves in short CMOS channels enables the operation of such TeraFETs as THz spectrometers. Further developments in Si CMOS sub-THz and THz applications will use Si CMOS integrated circuits. Examples of such circuits include the line-of-sight detectors (very important for future 300 GHz band 6G communications), traveling wave sub-THz amplifiers, and frequency-to-digital converters.

Automated summary

Short channel Si CMOS is used in THz detectors and THz imaging arrays. The excitation of phase-shifted resonant or overdamped plasma waves enables the operation of TeraFETs as THz spectrometers. Future developments in Si CMOS sub-THz and THz applications will involve Si CMOS integrated circuits such as line-of-sight detectors, traveling wave sub-THz amplifiers, and frequency-to-digital converters.