Demonstration of Enhanced Switching Variability and Conductance Quantization Properties in a SiO2 Conducting Bridge Resistive Memory with Embedded Two-Dimensional MoS2 Material

In this work, we explore the resistive switching behavior of a thin layer of SiO2 with embedded two-dimensional (2D) molybdenum disulfide, MoS2, in a conductive bridge random access memory (CBRAM) configuration. The proposed device exhibits enhanced conductance quantization behavior, reduced variability due to the suppression of the stochastic filament formation process, and synaptic properties. The device operates under the bipolar switching mode without the application of any electroforming procedure; eight different quantized conductance states were captured during direct current (DC) operation and 10 quantized states were recorded under pulse measurements. On top of that, both improved endurance and retention properties as well as linearity of the synaptic potentiation and depression procedures were attained; the underlying origins of these effects are attributed to the control of the Ag ion diffusion barrier through the existence of the atomic sieve of MoS2. Our work paves the way for the development of robust memristive elements for the implementation of stable resistive switching and neuromorphic functionalities.

Automated summary

In this work, the resistive switching behavior of SiO2 thin layer embedded with MoS2 in CBRAM configuration was explored. The proposed device exhibited enhanced conductance quantization behavior and synaptic properties, with the suppression of stochastic filament formation. Improved endurance and retention properties, as well as linearity of synaptic potentiation and depression procedures, were achieved through the control of Ag ion diffusion barrier by the existence of MoS2 atomic sieve.