Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

H2V3O8/GaN n-n heterojunction ultraviolet photodetectors are fabricated via a facile dip-coating method. The Schottky junction between the GaN and H2V3O8 builds a built-in electric field to achieve the self-powered phenomenon. The photodetector presents a high photocurrent (0.23 mu A) and a fast response speed (less than 0.3 s) at 0 V bias and under 365 nm light illumination (24.50 mW cm(-2)). Furthermore, the photocurrent increases steadily as the light intensity increases from 0.53 to 24.50 mW cm(-2). The H2V3O8/GaN heterojunction holds great potential to realize high-performance hybrid PDs.

Automated summary

H2V3O8/GaN n-n heterojunction ultraviolet photodetectors were successfully fabricated using a dip-coating method. The photodetector exhibited high photocurrent and fast response speed under specific light conditions, with the photocurrent increasing steadily as the light intensity increased. The H2V3O8/GaN heterojunction holds great potential for high-performance hybrid photodetectors.