期刊
MATERIALS HORIZONS
卷 9, 期 9, 页码 -出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2mh00466f
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资金
- National Natural Science Foundation of China [61804059, 21825103, 51727809, 21871099]
- Fundamental Research Funds for the Central University [2019kfyXMBZ018]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
Synaptic transistors with non-linear conductance were successfully realized using a two-dimensional van der Waals heterostructure based float gate memory device. The device exhibited highly non-linear conductance and lateral inhibition function similar to horizontal cells, enabling adjustable edge enhancement for early visual processing.
Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS2/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >10(6)), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors.
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